Publication source
Journal of the Society for Information Display
Volume 27, Issue 5, May 2019, Pages 304-312
Authors
Katsouras I., Frijters C., Poodt P., Gelinck G., Kronemeijer A.J.
Abstract
Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide buffer layer into the TFT stack further improves uniformity and stability. The results demonstrate the viability of atmospheric sALD as a novel deposition technique for the flat-panel display industry.
Copyright © 2019 Society for Information Display.
Read the whole article published in the Society for Information Display here.
Funding text
The authors would like to thank the process engineers of Holst Centre’s GEN1 R&D (TFT) Pilot Line for the fabrication of the TFT backplanes. This work was financed by the Flexlines project within the Interreg V‐programme Flanders‐The Netherlands, a cross‐border cooperation program with financial support from the European Regional Development Fund, and cofinanced by the Province of Noord‐Brabant, The Netherlands.
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